二维材料晶体

WSe₂ (Tungsten Diselenide)是一种半导体层状材料。层间相互作用为范德华（van der Waals）相互作用。它是间接带隙半导体，带隙大小约为1.3 eV。但是单层的WSe2是直接带隙半导体。二硒化钨属于第六族过渡金属二卤化物（TMDC）。我们提供的WSe₂直径8 -10 mm，未掺杂的是p型半导体，室温下载流子浓度约为1015 cm-3量级。我们也提供Re掺杂的n型WSe₂

WSe₂ crystal properties

Crystal size	~10 mm
Electrical properties	Semiconductor, p-type (we also have n-type available)
Crystal structure	hexagonal
Unit cell parameters	a = b = 0.328 nm, c = 1.298 nm, α = β = 90°, γ = 120°
Monolayer properties	Link to C2DB containing calculated properties
Type	Synthetic
Purity	>99.995 %
Characterized by	XRD, Raman, EDX, Hall measurement