MoSe2 (2H Molybdenum Diselenide)是一种半导体层状材料。层间相互作用为范德华（van der Waals）相互作用。它是间接带隙半导体，带隙大小约为1.1 eV。二硒化钨属于第六族过渡金属二卤化物（TMDC）。我们提供的2H-MoSe2直径8 -10 mm，未掺杂的是n型半导体，室温下载流子浓度约为1015 cm-3量级。我们也提供Nb掺杂的p型MoSe2，其室温载流子浓度约为1018 cm-3量级（或更高）。
MoSe2 crystal properties
| Crystal size | 8-10 mm |
| Electrical properties | Semiconductor, n-type (p-type is also available) |
| Crystal structure | hexagonal |
| Unit cell parameters | a = b = 0.329 nm, c = 1.289 nm, α = β = 90°, γ = 120° |
| Monolayer properties |  Link to C2DB containing calculated properties |
| Type | Synthetic |
| Purity | >99.995 % |
| Characterized by | XRD, Raman, EDX, Hall measurement |
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